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Preliminary Technical Information
Polar TM Power MOSFET
HiPerFET TM
N-Channel Enhancement Mode
IXFH10N100P
IXFV10N100P
IXFV10N100PS
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
1000V
10A
1.4 Ω
300 ns
Avalanche Rated
Fast Intrinsic Diode
PLUS220 (IXFV)
S
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Maximum Ratings
1000
1000
V
V
G
D
D (TAB)
V GSS
V GSM
I D25
Continuous
Transient
T C = 25 ° C
± 30
± 40
10
V
V
A
PLUS220SMD (IXFV_S)
I DM
I A
E AS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
25
5
500
A
A
mJ
G
S
D (TAB)
dV/dt
P D
T J
T JM
T stg
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
15
380
-55 ... +150
150
-55 ... +150
V/ns
W
° C
° C
° C
TO-247 (IXFH)
D (TAB)
T L
T SOLD
Maximum lead temperature for soldering
Plastic body for 10s
300
260
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
M d
F C
Weight
Mounting torque (TO-247)
Mounting force (PLUS220)
TO-247
PLUS 220 types
1.13/10
11..65/2.5..14.6
6
4
Nm/lb.in.
N/lb.
g
g
Features
International standard packages
Fast recovery diode
Avalanche rated
Low package inductance
Advantages
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Easy to mount
Space savings
High power density
BV DSS
V GS = 0V, I D = 1mA
1000
V
V GS(th)
I GSS
V DS = V GS , I D = 1mA
V GS = ± 30V, V DS = 0V
3.5
6.5
± 100
V
nA
Applications:
Switched-mode and resonant-mode
power supplies
I DSS
R DS(on)
V DS = V DSS
V GS = 0V T J = 125 ° C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
25 μ A
1.25 mA
1.4 Ω
DC-DC Converters
Laser Drivers
AC and DC motor drives
Robotics and servo controls
? 2008 IXYS CORPORATION, All rights reserved
DS99922(09/08)
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相关代理商/技术参数
IXFH10N100Q 功能描述:MOSFET 12 Amps 1000V 1.05 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH10N60 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFH10N65 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFH10N80P 功能描述:MOSFET 10 Amps 800V 1.1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH10N90 功能描述:MOSFET 10 Amps 900V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH110N10P 功能描述:MOSFET 110 Amps 100V 0.015 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH110N15T2 功能描述:MOSFET 110 Amps 150V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH110N25T 功能描述:MOSFET 110 Amps 0V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube